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A study of defects induced in GaAs by plasma etching

✍ Scribed by L. He; W.A. Anderson


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
578 KB
Volume
35
Category
Article
ISSN
0038-1101

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Electronic defects induced in silicon by
✍ A. Belkacem; E. AndrΓ©; J.C. Oberlin; C. Pomot; B. Pajot; A. Chantre πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 345 KB

Electronic defects induced in p-type silicon by SF~ plasma etching in microwave multipolar plasma reactors have been studied by capacitance ,spectroscopy, spreading resistance and infrared absorption measurements. A passivation of the boron electrical activity observed near 'the etched surface is as