Visible bands arising from N-related defects are investigated by dynamic cathodoluminescence (CL) and Gaussian deconvolution. The intensity of the red band increases while that of the ultraviolet (UV) band decreases. The intensity of the yellow band also decreases but only slightly as a function of
✦ LIBER ✦
Study of defects in implanted GaAs: Te by cathodoluminescence
✍ Scribed by B. Méndez; J. Piqueras; A. Cavallini; B. Fraboni
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 249 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Determination of nitrogen-related defect
✍
Y.F. Mei; G.G. Siu; Ricky K.Y. Fu; K.W. Wong; Paul K. Chu; C.W. Lai; H.C. Ong
📂
Article
📅
2005
🏛
Elsevier Science
🌐
English
⚖ 914 KB
Defects study by photoluminescence and c
✍
E. Rzepka; A. Lusson; A. Riviere; A. Aoudia; Y. Marfaing; R. Triboulet
📂
Article
📅
1996
🏛
Elsevier Science
🌐
English
⚖ 458 KB
Annealing of native defects in Te-doped
✍
A. SenGupta; A.K. Bhatnagar; K.P. Gopinathan; C.S. Sundar
📂
Article
📅
1993
🏛
Elsevier Science
🌐
English
⚖ 307 KB
Defects in H implanted GaAs studied by i
✍
J. Keinonen; E. Rauhala; J. Räisänen; K. Saarinen; P. Hautojärvi; C. Corbel
📂
Article
📅
1991
🏛
Elsevier Science
🌐
English
⚖ 260 KB
Ion-beam and low-energy positron-beam techniques have been used to study damage and implanted ion distributions and their annealing behavior in semi-insulating GaAs after the room temperature implantation of 3 × 10~-1 x 10 ~7 60 keV H' cm -'. The redistribution of the implanted H during annealing wa
Local cathodoluminescence study of defec
✍
M.V. Zamoryanskaya; Ya.V. Domracheva; A.A. Shakhmin; D.B. Shustov; A.N. Trofimov
📂
Article
📅
2009
🏛
Elsevier Science
🌐
English
⚖ 284 KB
Study of Electronic Surface Properties o
✍
Djemel, A. ;Tarento, R. J. ;Castaing, J. ;Marfaing, Y. ;Nouiri, A.
📂
Article
📅
1998
🏛
John Wiley and Sons
🌐
English
⚖ 165 KB
👁 2 views