Electronic defects induced in silicon by SF6 plasma etching

✍ Scribed by A. Belkacem; E. André; J.C. Oberlin; C. Pomot; B. Pajot; A. Chantre

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 345 KB
• Volume: 4
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90285-7

✦ Synopsis

Electronic defects induced in p-type silicon by SF~ plasma etching in microwave multipolar plasma reactors have been studied by capacitance ,spectroscopy, spreading resistance and infrared absorption measurements. A passivation of the boron electrical activity observed near 'the etched surface is associated with hydrogen contamination due to residual water traces in the reactor. Deep level transient spectroscopy measurements reveal two deep levels in the gap after etching, located at 0.51 and 0.36 eV above the valence band. We studied the influence of plasma parameters', gas nature and post-etch thermal annealing on the H(0.51) and H(0.36) levels'. The results show that the occurrence of the H(0.51) level is correlated with displacement damage .production and the presence of SF,. species in the plasma. The H(0.36) level is due to the formation of a carbon-interstitial-related defect.