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Photoluminescence of defects introduced by deuterium plasmas in silicon

✍ Scribed by H. Weman; J.L. Lindström; G.S. Oehrlein

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
386 KB
Volume
4
Category
Article
ISSN
0921-5107

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Electronic defects induced in p-type silicon by SF~ plasma etching in microwave multipolar plasma reactors have been studied by capacitance ,spectroscopy, spreading resistance and infrared absorption measurements. A passivation of the boron electrical activity observed near 'the etched surface is as