Photoluminescence analysis of intra-grain defects in cast-grown polycrystalline silicon wafers

Analysis of photoluminescence spectra fo

Analysis of photoluminescence spectra for detection of stress-induced defects in silicon substrates after the polycrystalline diamond film deposition

✍ Victor S. Bagaev; Denis F. Aminev; Tatiana I. Galkina; Andrey Yu. Klokov; Vladim 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 194 KB

The low temperature (5 K) photoluminescence (PL) of silicon substrate in the range of 0.8-1.12 eV before and after microwave plasma assisted chemical vapor deposition of polycrystalline diamond films was studied. The diamond films were deposited onto the pure (r$3 kOhm cm) dislocation-free silicon t