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Reliability of gate dielectrics and metal–insulator–metal capacitors

✍ Scribed by Andreas Martin

Book ID
108210531
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
342 KB
Volume
45
Category
Article
ISSN
0026-2714

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Improved electrical characteristics and reliability of amorphous InGaZnO metal–insulator–semiconductor capacitor with high κ HfOxNy gate dielectric
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High j HfO x N y film was deposited on amorphous InGaZnO (a-IGZO) by radio-frequency reactive sputtering using an HfO 2 target in nitrogen plus argon ambience, the electrical characteristics and reliability of a-IGZO metal-insulator-semiconductor (MIS) capacitors were investigated. Experimental resu