✦ LIBER ✦

Plasma-enhanced flexible metal–insulator–metal capacitor using high-k ZrO2 film as gate dielectric with improved reliability

✍ Scribed by Min-Ching Chu; Jagan Singh Meena; Chih-Chia Cheng; Hsin-Chiang You; Feng-Chih Chang; Fu-Hsiang Ko

Book ID: 104056436
Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 747 KB
Volume: 50
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2010.05.004

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Improved electrical characteristics and

Improved electrical characteristics and reliability of amorphous InGaZnO metal–insulator–semiconductor capacitor with high κ HfOxNy gate dielectric

✍ Xiao Zou; Guojia Fang; Longyan Yuan; Xingsheng Tong; Xingzhong Zhao 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 809 KB

High j HfO x N y film was deposited on amorphous InGaZnO (a-IGZO) by radio-frequency reactive sputtering using an HfO 2 target in nitrogen plus argon ambience, the electrical characteristics and reliability of a-IGZO metal-insulator-semiconductor (MIS) capacitors were investigated. Experimental resu

GaN metal–insulator–semiconductor high-e

GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation

✍ Hwang, Ya-Hsi ;Liu, Lu ;Velez, Camilo ;Ren, Fan ;Gila, Brent P. ;Hays, David ;Pe 📂 Article 📅 2013 🏛 AVS (American Vacuum Society) 🌐 English ⚖ 783 KB

Wide-bandgap high-k Y[sub 2]O[sub 3] as

Wide-bandgap high-k Y[sub 2]O[sub 3] as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high-k HfTiO gate dielectric

✍ Li, C. X.; Lai, P. T. 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 470 KB