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GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation

✍ Scribed by Hwang, Ya-Hsi ;Liu, Lu ;Velez, Camilo ;Ren, Fan ;Gila, Brent P. ;Hays, David ;Pearton, Stephen J. ;Lambers, Eric ;Kravchenko, Ivan I. ;Lo, Chien-Fong ;Johnson, Jerry W.

Book ID: 127295889
Publisher: AVS (American Vacuum Society)
Year: 2013
Tongue: English
Weight: 783 KB
Volume: 31
Category: Article
ISSN: 1520-8567
DOI: 10.1116/1.4816477

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