A systematic investigation of the ellipsometric parameters of MBE-grown heterostructures of InxGal \_xAs on GaAs substrate has been completed. The index of refraction n, and extinction coefficient, k, values of the above heterostructure in the wavelength range 500-800 nm, are presented, a region of
Reliability in Modeling of Spectroscopic Ellipsometry
β Scribed by Lin, S.H. ;Chan, Y.C. ;Webb, D.P. ;Lam, Y.W.
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 130 KB
- Volume
- 182
- Category
- Article
- ISSN
- 0031-8965
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