~ Real-time monitoring and control are considered essential for the manufacture of next-generation epitaxially grown semiconductor device structures. In situ spectroscopic ellipsometry has demonstrated the precise film characterization required to achieve acceptable yields.
β¦ LIBER β¦
In situ control of SiOx composition by spectroscopic ellipsometry
β Scribed by B Gallas; C.-C Kao; S Fisson; G Vuye; J Rivory
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 79 KB
- Volume
- 105
- Category
- Article
- ISSN
- 0921-5107
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