Normal incidence reflectivity measurements were carried out in an AIX 2000G3HT Multiwafer Planetary Reactor 1 MOVPE system, a large scale production tool for GaN-based devices. In situ monitoring was used to investigate nucleation behaviour, temperature dependence of GaN growth, and the deposition o
β¦ LIBER β¦
Spectroscopic Ellipsometry in-situ Monitoring/Control of GaN Epitaxial Growth in MBE and MOVPE
β Scribed by Yoshikawa, A. ;Xu, K. ;Taniyasu, Y. ;Takahashi, K.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 322 KB
- Volume
- 190
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
In Situ Monitoring of GaN Growth in Mult
β
LΓΌnenbΓΌrger, M. ;Protzmann, H. ;Heuken, M. ;JΓΌrgensen, H.
π
Article
π
1999
π
John Wiley and Sons
π
English
β 191 KB
π 1 views
In-Situ Monitoring of GaN Growth by Hydr
β
Martin, D. ;Carlin, J.F. ;Wagner, V. ;BοΏ½hlmann, H.J. ;Ilegems, M.
π
Article
π
2002
π
John Wiley and Sons
π
English
β 113 KB
π 2 views
In situ Raman monitoring of the molecula
β
Dietrich R. T. Zahn; Andreas Schneider; Dietrich Drews
π
Article
π
1997
π
John Wiley and Sons
π
English
β 243 KB
π 2 views
Raman spectroscopy was applied to monitor the growth of GaN at temperatures around 600 ΓC without interrupting the growth process. GaN was deposited on GaAs(100) and Si(111) substrates by molecular beam epitaxy using elemental Ga and atomic nitrogen provided by an r.f. plasma source. Sufficient sign