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In Situ Monitoring of GaN Growth in Multiwafer MOVPE Reactors

✍ Scribed by Lünenbürger, M. ;Protzmann, H. ;Heuken, M. ;Jürgensen, H.

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
191 KB
Volume
176
Category
Article
ISSN
0031-8965

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✦ Synopsis

Normal incidence reflectivity measurements were carried out in an AIX 2000G3HT Multiwafer Planetary Reactor 1 MOVPE system, a large scale production tool for GaN-based devices. In situ monitoring was used to investigate nucleation behaviour, temperature dependence of GaN growth, and the deposition of GaN/InGaN multiquantum wells, especially the quality of interfaces. The obtained results were compared with RT photoluminescence, and high resolution X-ray measurements.

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Raman spectroscopy was applied to monitor the growth of GaN at temperatures around 600 ÄC without interrupting the growth process. GaN was deposited on GaAs(100) and Si(111) substrates by molecular beam epitaxy using elemental Ga and atomic nitrogen provided by an r.f. plasma source. Sufficient sign