𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Characterization of Si nanorods by spectroscopic ellipsometry with efficient theoretical modeling

✍ Scribed by Hsu, Shih-Hsin ;Liu, En-Shao ;Chang, Yia-Chung ;Hilfiker, James N. ;Kim, Young Dong ;Kim, Tae Jung ;Lin, Chun-Jung ;Lin, Gong-Ru


Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
542 KB
Volume
205
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis


Abstract

Spectroscopic ellipsometry (SE) is applied to characterize Si columnar nanostructures. By employing effective medium approximation (EMA) theory, Si nanorods are treated as a graded layer with each sub‐layer modeled as a mixture of Si and voids with varying porosity fraction. In addition, the rigorous coupled‐wave analysis and finite‐element Green's function method were used in modeling Si nanorods as a stack of disks with varying diameters and thicknesses, and the calculations are in satisfactory agreement with the measurement results. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


📜 SIMILAR VOLUMES


Complete optical characterization of the
✍ Ohlídal, I.; Franta, D.; Pinčík, E.; Ohlídal, M. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 78 KB 👁 2 views

In this paper results concerning optical analysis of the SiO 2 =Si system performed by the combined ellipsometric and reflectometric method used in multiple-sample modification will be presented. This method is based on combining both the single-wavelength method and the dispersion method. Three mod

Analysis of Si1-xGex:H thin films with g
✍ Podraza, N. J. ;Li, Jing ;Wronski, C. R. ;Dickey, E. C. ;Horn, M. W. ;Collins, R 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 378 KB

## Abstract Silicon‐germanium (Si~1−__x__~ Ge__~x~__:H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH~4~ and GeH~4~ and measured during growth using real time spectroscopic ellipsometry. A two‐layer virtual interface analysis has been applied to study the structu