Analysis of Si1-xGex:H thin films with graded composition and structure by real time spectroscopic ellipsometry
✍ Scribed by Podraza, N. J. ;Li, Jing ;Wronski, C. R. ;Dickey, E. C. ;Horn, M. W. ;Collins, R. W.
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 378 KB
- Volume
- 205
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Silicon‐germanium (Si~1−x~ Ge__~x~:H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH~4~ and GeH~4~ and measured during growth using real time spectroscopic ellipsometry. A two‐layer virtual interface analysis has been applied to study the structural evolution of Si~1−x~ Ge~x~:H films that initially nucleate in the amorphous (a) phase, but evolve to the microcrystalline (μc) phase with accumulated thickness. The compositional evolution of alloy‐graded a‐Si~1−x~ Ge~x~__:H has been studied as well using similar methods. Both types of films are of interest for Si‐based photovoltaic devices. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)