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Characterization of MOCVD-grown GaAs on Si by spectroscopic ellipsometry

✍ Scribed by Guolin Yu; Tetsuo Soga; Takashi Jimbo; Masayoshi Umeno

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
290 KB
Volume
100-101
Category
Article
ISSN
0169-4332

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