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Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry

โœ Scribed by U. Rossow; T. Fieseler; D.R.T. Zahn; W. Richter; D.A. Woolf; D.I. Westwood; R.H. Williams

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
282 KB
Volume
5
Category
Article
ISSN
0921-5107

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โœฆ Synopsis

GaAs has been grown by molecular beam epitaxy on Si(lO0) using different substrate preparations, different conditions for the growth of a buffer layer and different thicknesses of the active layer. The quality of the layers is assessed by the direct interpretation of the pseudodielectric function obtained through ellipsometric measurements'. 7he results suggest a preference for certain substrate preparations and the condition for epitaxial growth of GaAs on Si(lO0).

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