Time-resolved photoluminescence characterization of GaAs and AlGaAs on Si substrate grown by MOCVD

✍ Scribed by T. Soga; M. Uehiro; Y. Azuma; M. Yang; T. Jimbo; M. Umeno

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 310 KB
• Volume: 35
• Category: Article
• ISSN: 0927-0248
• DOI: 10.1016/0927-0248(94)90125-2

✦ Synopsis

GaAs layers and A1GaAs solar cells grown on Si substrates have been characterized by time-resolved photoluminescence (TRP). The effects of the growth temperature, the strained layer superlattice (SLS), and the thermal cycle annealing (TCA) on the TRP characteristics are discussed. The minority carrier lifetime is increased with increasing growth temperature and by using SLS + TCA. The longest minority carrier lifetime of GaAs on Si obtained in this study is 0.50 ns.