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Relaxation of strained InGaAs during molecular beam epitaxy

✍ Scribed by Whaley, G. J.; Cohen, P. I.

Book ID: 118231150
Publisher: American Institute of Physics
Year: 1990
Tongue: English
Weight: 695 KB
Volume: 57
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.103966

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## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri