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Indium desorption from strained InGaAs/GaAs quantum wells grown by molecular beam epitaxy

โœ Scribed by Radhakrishnan, K.


Book ID
121826630
Publisher
AVS (American Vacuum Society)
Year
1994
Tongue
English
Weight
699 KB
Volume
12
Category
Article
ISSN
0734-2101

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Long-wavelength strained-layer InGaAs/Ga
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## Abstract The operation in the 1020 nm wavelength range of strainedโ€layer InGaAs/GaAs separateโ€confinementโ€heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 ร… thick InGaAs quantum well with an indium content of 25%, which is close to cri