Segregation of indium in InGaAs/GaAs quantum wells grown by vapor-phase epitaxy
✍ Scribed by Yu. N. Drozdov; N. V. Baidus’; B. N. Zvonkov; M. N. Drozdov; O. I. Khrykin; V. I. Shashkin
- Book ID
- 110133657
- Publisher
- Springer
- Year
- 2003
- Tongue
- English
- Weight
- 79 KB
- Volume
- 37
- Category
- Article
- ISSN
- 1063-7826
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## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri