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Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE

✍ Scribed by J. Nagle; J.P. Landesman; M. Larive; C. Mottet; P. Bois

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
494 KB
Volume
127
Category
Article
ISSN
0022-0248

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We present a study of the electronic properties of \(\mathrm{In}_{x} \mathrm{Ga}_{1-x} \mathrm{As} / \mathrm{GaAs}\) quantum wells when grown on vicinal substrates, based on photoluminescence (PL) and PL excitation experiments under high magnetic field. The samples measured have a wide range of In c