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Indium incorporation in GaInAs/GaAs quantum wells grown on GaAs

โœ Scribed by K. Woodbridge; K.J. Moore; N.L. Andrew; P.F. Fewster


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
425 KB
Volume
111
Category
Article
ISSN
0022-0248

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Carriers escape mechanisms in shallow In
โœ A. Tabata; S. Martini; A.A. Quivy; A.M. Ceschin; J.R. Leite ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 87 KB

We used photoluminescence spectroscopy in order to investigate the carriers escape mechanisms in In 0.15 Ga 0.85 As/GaAs quantum wells grown on top of nominal ( 001) and 2 โ€ข -, 4 โ€ข -and 6 โ€ข -off (001) towards (111)A GaAs substrates. We described the escape processes using two models that fit the Arr