Spectroscopic studies of ultra-thin quantum-wells of GaAs and GaInAs in InP grown by MOVPE
β Scribed by D. Hessman; X. Liu; M-E. Pistol; L. Samuelson; W. Seifert
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 489 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0038-1101
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π SIMILAR VOLUMES
Quantum wells of the quaternary (GaIn)(NAs) alloy are grown compressively strained on GaAs by metal-organic vapor phase epitaxy (MOVPE) at low temperatures under non-equilibrium conditions. Growth experiments of particular heteroepitaxial multilayer systems are reported and the influence of varying
A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to \(280 \mathrm{~nm}\), is reported. The InP LO phonon shows an increasing frequency blueshift with decreasing layer thickn