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A Raman study of the strain in InP/GaAs heterostructures grown by MOVPE

✍ Scribed by S. Gennari; P.P. Lottici; F. Riccò

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
145 KB
Volume
17
Category
Article
ISSN
0749-6036

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✦ Synopsis

A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to (280 \mathrm{~nm}), is reported. The InP LO phonon shows an increasing frequency blueshift with decreasing layer thickness, indicating a residual compressive strain due to the lattice mismatch and to the difference between the thermal expansion coefficients of InP and GaAs.

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