A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to \(280 \mathrm{~nm}\), is reported. The InP LO phonon shows an increasing frequency blueshift with decreasing layer thickn
β¦ LIBER β¦
Raman study of V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by MOCVD
β Scribed by A. Sayari; N. Yahyaoui; M. Oueslati; H. Maaref; K. Zellama
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 208 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0377-0486
- DOI
- 10.1002/jrs.2224
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