A Comparative Study of the Near Band Edge Luminescence of Epitaxial ZnSe:N Grown by MBE and MOVPE
✍ Scribed by A.L. Gurskii; H. Hamadeh; H. Kalisch; M. Heuken; G.P. Yablonskii; K. Heime
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 119 KB
- Volume
- 229
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
A comparative study of the photoluminescence, reflection, and photoluminescence excitation spectra of MBE-and MOVPE-grown nitrogen-doped ZnSe samples has been carried out. MOVPEgrown samples demonstrate impurity recombination via shallow donor states while MBE-grown samples show mainly recombination via deep donor states, with significantly lower donor concentrations. Thus, the shallow donors are the main cause of compensation in MOVPE-grown samples. In MBE-grown samples, the excitation transfer to impurity states takes place mainly via free excitonic states and acceptor-bound excitons, while in MOVPE-grown ZnSe : N the excitation transfer occurs mainly via donor-bound excitons. A simultaneous presence of a broad 2.6 eV band and a narrower 2.7 eV band was observed in time-integrated spectra of MOVPE-grown ZnSe : N.