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Interface roughness and charge carrier recombination lifetimes in GaInAs/InP quantum wells grown by LP-MOVPE

✍ Scribed by M. Engel; R.K. Bauer; D. Bimberg; D. Grützmacher; H. Jürgensen

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Finite interface effects for thin GaInAs

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Spectroscopic studies of ultra-thin quan

✍ D. Hessman; X. Liu; M-E. Pistol; L. Samuelson; W. Seifert 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 489 KB