High quality GaAs/AlGaAs quantum wells grown on (111)A substrates by metalorganic vapor phase epitaxy

✍ Scribed by E. Mayo; S.A. Dickey; A. Majerfeld; A. Sanz-Hervás; B.W. Kim

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 468 KB
• Volume: 28
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(96)00110-3

✦ Synopsis

Growth of GaAs and AIGaAs epitaxial layers on both (111)A and (111)B faces ofGaAs substrates was studied by the atmospheric metalorganic vapor phase epitaxy (MOVPE) technique. We show that GaAs and A1GaAs layers with excellent surface quality can be grown at relatively low temperatures and V/Ill ratios (600°C, 15) on the (111)A face, whereas for layers on the (111)B face a higher growth temperature (720°C) was required. GaAs/A1GaAs quantum well (QW) structures were successfully grown for the first time on the (111)A GaAs face by the MOVPE technique. The effects ofv0rious growth conditions on the surface morphology of the epilayers were studied. For the (111)A surface a wide growth window with temperatures