GaInAs/InP quantum wires grown by metalorganic vapor phase epitaxy on V-grooved InP substrates

✍ Scribed by M. Geiger; F. Adler; U.A. Griesinger; H. Schweizer; F. Scholz

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 414 KB
• Volume: 28
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(96)00129-2

✦ Synopsis

A single nominally lattice matched GalnAs quantum well (QW)/quantum wire (QWR) structure was grown by metalorganic vapor phase epitaxy (MOVPE) in Vgrooved lnP substrates. Different SiO2 etch masks with opening widths from 2/tin down to 200 nm (for application as second order DFB grating) were defined by optical and electron beam lithography. A damage-reduced wet chemical etching process enables the growth of the GalnAs QWs/QWRs without any lnP buffer layer. In low temperature photoluminescence we found improved intensity for all wire structures prepared by this etching technique. A reduction of the period and opening width of the V-groove etch mask resulted in a optimized luminescence intensity ratio between QW and QWR. Decay times from time resolved luminescence measurements were compared to the decay times of wet or dry etched mesa wires before and al~er regrowth. The good optical properties of the GalnAs QWI~ are encouraging for