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Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy

✍ Scribed by Gendry, M.; Drouot, V.; Santinelli, C.; Hollinger, G.

Book ID: 125463468
Publisher: American Institute of Physics
Year: 1992
Tongue: English
Weight: 656 KB
Volume: 60
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.107045

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