Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures

✍ Scribed by Gendry, M.; Drouot, V.; Hollinger, G.; Mahajan, S.

• Book ID: 120444505
• Publisher: American Institute of Physics
• Year: 1995
• Tongue: English
• Weight: 342 KB
• Volume: 66
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.114175