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Effect of strained InGaAs step bunching on mobility and device performance in n-InGaP/InGaAs/GaAs pseudomorphic heterostructures grown by metalorganic vapor phase epitaxy

✍ Scribed by T. Kikkawa; K. Makiyama; H. Ochimizu; K. Kasai; J. Komeno


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
760 KB
Volume
145
Category
Article
ISSN
0022-0248

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