SIMS analysis of InP, GaAs and InGaAs layers grown by chemical beam epitaxy

✍ Scribed by Y. Gao; S. Godefroy; J. L. Benchimol; F. Alaoui; F. Alexandre; K. Rao

• Book ID: 104592571
• Publisher: John Wiley and Sons
• Year: 1990
• Tongue: English
• Weight: 364 KB
• Volume: 16
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/sia.740160111

✦ Synopsis

Abstract

SIMS analysis was applied to the characterization of InP, GaAs and InGaAs grown by chemical beam expitaxy (CBE). It includes the control of purity and doping, and the determination of growth rate and matrix composition. Some important characteristics of CBE growth, such as carbon incorporation, the temperature dependence of the growth rate and contamination by isoelectric elements, were studied carefully.