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VB-7 InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical-beam epitaxy

✍ Scribed by Campbell, J.C.; Tsang, W.T.; Qua, G.J.; Johnson, B.C.

Book ID: 114596188
Publisher: IEEE
Year: 1987
Tongue: English
Weight: 163 KB
Volume: 34
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1987.23305

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## Abstract SIMS analysis was applied to the characterization of InP, GaAs and InGaAs grown by chemical beam expitaxy (CBE). It includes the control of purity and doping, and the determination of growth rate and matrix composition. Some important characteristics of CBE growth, such as carbon incorp