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Long wavelength InGaAsP/InP distributed feedback lasers grown by chemical beam epitaxy

✍ Scribed by W.T. Tsang; F.S. Choa; M.C. Wu; Y.K. Chen; R.A. Logan; S.N.G. Chu; A.M. Sergent; P. Magill; K.C. Reichmann; C.A. Burrus


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
727 KB
Volume
124
Category
Article
ISSN
0022-0248

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Long-wavelength strained-layer InGaAs/Ga
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## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri