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Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy

✍ Scribed by D.H Woo; M.S Oh; E.H Koh; J.S Yahng; S.H Kim; Y.D Kim


Book ID
114155992
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
550 KB
Volume
51-52
Category
Article
ISSN
0167-9317

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Long-wavelength strained-layer InGaAs/Ga
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## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Γ… thick InGaAs quantum well with an indium content of 25%, which is close to cri