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Regrowth behaviour of Si1−xGex/Si structures formed by Ge+ ion implantation and post amorphisation

✍ Scribed by J.P. Zhang; R.J. Wilson; P.L.F. Hemment; A. Claverie; F. Cristiano; P. Salles; J.Q. Wen; J.H. Evans; A.R. Peaker; G.J. Parker

No coin nor oath required. For personal study only.

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