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Rapid thermal annealing of Si1−xGex layers formed by germanium ion implantation

✍ Scribed by Z. Xia; J. Saarilahti; H. Ronkainen; S. Eränen; I. Suni; J. Molarius; P. Kuivalainen; E. Ristolainen; T. Tuomi

No coin nor oath required. For personal study only.

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