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Reduction of dislocation density of MBE-grown Si1−xGex layers on (100) Si by rapid thermal annealing

✍ Scribed by B. Holländer; S. Mantl; W. Jäger; F. Schäffler; E. Kasper

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 452 KB
Volume: 183
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(89)90440-9

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