Effect of rapid thermal annealing on Zn1-xCdxO layers grown by radio-frequency magnetron co-sputtering
✍ Scribed by J. H. Yu; J. H. Kim; D. S. Park; T. S. Jeong; C. J. Youn; K. J. Hong
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 714 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0232-1300
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✦ Synopsis
Zn 1-x Cd x O layers were deposited on the sapphire substrate using the radio-frequency magnetron co-sputtering system. The grown Zn 1-x Cd x O layers were carried out in the post-annealing treatment for 1 min at the 800 o C oxygen-ambient by the rapid thermal annealing (RTA) method. X-ray diffraction (XRD) experiment shows that the Zn 1-x Cd x O layers are changed from the single phase of the hexagonal structure at 0≤x≤0.08 to the double phase of hexagonal-and-cubic structure at x=0.13. Thus, the maximum Cd-composition ratio with the hexagonal structure was found out to be x=0.08. Also, the crystallinity of Zn 1-x Cd x O layers at x=0.13 was remarkably improved by the RTA annealing treatment. This crystal quality improvement was thought to be associated with the relaxation of the compressive strain remaining in the Zn 1-x Cd x O layers. Therefore, the results of XRD and transmittance lead that the crystal quality of the Zn 1-x Cd x O layers forming the hexagonal ZnO phase is better than that forming the cubic CdO phase. Consequently, the reliable formation and the crystallinity of the Zn 1-x Cd x O layers were achieved by using the RTA method of short-time thermal-annealing at the high temperature.