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Recombination activity of nickel in Czochralski silicon during rapid thermal process

โœ Scribed by Weiyan Wang; Zhenqiang Xi; Deren Yang; Duanlin Que


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
161 KB
Volume
9
Category
Article
ISSN
1369-8001

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Oxygen precipitation (OP) behaviors in heavily arsenic-doped Czochralski silicon wafers without and with prior rapid thermal processing at 1100-1250 1C, subjected to subsequent two-step anneal of 450, 650 and 800 1C/4 h+1000 1C/16 h, have been investigated. It is found that the prior RTP at 1250 1C