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In-process control of silicide formation during rapid thermal processing

✍ Scribed by J.-M. Dilhac; C. Ganibal; N. Nolhier; P.B. Moynagh; C.P. Chew; P.J. Rosser

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
202 KB
Volume
63
Category
Article
ISSN
0169-4332

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We studied arsenic redistribution with annealing time in the Si-W system during the formation of WSi 2 by rapid thermal processing at 850 Β°C. The silicon was arsenic doped and the tungsten was deposited by sputtering. A significant amount of arsenic diffuses back and segregates at the WSi2-Si interf