Dopant redistribution during the formation of tungsten disilicide by rapid thermal processing

✍ Scribed by J.C. Dupuy; A. Essaadani; A. Sibai; D. Barbier

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 321 KB
• Volume: 22
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(94)90240-2

✦ Synopsis

We studied arsenic redistribution with annealing time in the Si-W system during the formation of WSi 2 by rapid thermal processing at 850 °C. The silicon was arsenic doped and the tungsten was deposited by sputtering. A significant amount of arsenic diffuses back and segregates at the WSi2-Si interface, the remainder is incorporated in the disilicide. This behavior is quite different from that of boron, which diffuses simultaneously to the silicon through the disilicide layer.