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Reasons for lower dielectric constant of fluorinated SiO2 films

โœ Scribed by Han, Sang M.; Aydil, Eray S.


Book ID
111922566
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
361 KB
Volume
83
Category
Article
ISSN
0021-8979

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Evaluation of SiO2 aerogel thin film wit
โœ Moon-Ho Jo; Jung-Kyun Hong; Hyung-Ho Park; Joong-Jung Kim; Sang-Hun Hyun ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 316 KB

The material and dielectric properties of SiO 2 aerogel thin films were studied. These films were fabricated by spin coating and a subsequent supercritical drying method. Film porosity was evaluated as 67% with Rutherford backscattering spectrometry and its dielectric constant was measured to be 2.1