Fabrication and characterization of orie
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Gao, X. D. ;Jiang, E. Y. ;Liu, H. H. ;Li, G. K. ;Mi, W. B. ;Li, Z. Q. ;Wu, P. ;B
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Article
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2007
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John Wiley and Sons
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English
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## Abstract AlN films have been fabricated using a dc magnetron sputtering system under different N~2~ partial pressures, __P__~N~, without substrate heating. Xβray diffraction revealed that the AlN(002) peak intensity increases first with increasing __P__~N~ (10β40%) and then drops when __P__~N~ i