Fabrication and characterization of orientated grown AlN films sputtered at room temperature

✍ Scribed by Gao, X. D. ;Jiang, E. Y. ;Liu, H. H. ;Li, G. K. ;Mi, W. B. ;Li, Z. Q. ;Wu, P. ;Bai, H. L.

• Book ID: 105363983
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 994 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200623009

✦ Synopsis

Abstract

AlN films have been fabricated using a dc magnetron sputtering system under different N~2~ partial pressures, P~N~, without substrate heating. X‐ray diffraction revealed that the AlN(002) peak intensity increases first with increasing P~N~ (10–40%) and then drops when P~N~ is increased to 50%. Optical transmission studies derived the refractive index of 1.84–1.91 and the optical band gap of 5.83–5.91 eV. Strong absorption caused by the oxygen impurities and nitrogen vacancies was observed in the transmission spectrum of the sample fabricated under P~N~ of 10%. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)