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Reactants in SiC chemical vapor deposition using CH3SiH3 as a source gas

✍ Scribed by Y. Ohshita

Book ID: 103171041
Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 372 KB
Volume: 147
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(94)00656-3

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