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Radio frequency bias power effects on silicon nitride film deposited in SiH4-NH3using a plasma-enhanced chemical vapor deposition

✍ Scribed by Suyean Kim; Byungwhan Kim

Book ID
107662012
Publisher
TechnoPress
Year
2009
Tongue
English
Weight
946 KB
Volume
15
Category
Article
ISSN
1598-9623

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Temperature effect on charge density of
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✍ Byungwhan Kim; Sang Hee Kwon πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 592 KB

Improved surface passivation of silicon nitride films requires a high positive charge density. A neural network model of SiN charge density was used to investigate temperature effects on charge density. For a systematic modeling, the deposition process was characterized by means of a face-centered B