Two-dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine-alane as the aluminum source in low pressure metalorganic chemical vapor deposition

✍ Scribed by Asif Khan, M.; Chen, Q.; Sun, C. J.; Shur, M.; Gelmont, B.

• Book ID: 126555590
• Publisher: American Institute of Physics
• Year: 1995
• Tongue: English
• Weight: 246 KB
• Volume: 67
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.114516