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Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation

โœ Scribed by Enxia Zhang; Jiayin Sun; Jing Chen; Zhengxuan Zhang; Xi Wang; Ning Li; Guoqiang Zhang; Zhongli Liu


Book ID
107453465
Publisher
Springer US
Year
2005
Tongue
English
Weight
83 KB
Volume
34
Category
Article
ISSN
0361-5235

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๐Ÿ“œ SIMILAR VOLUMES


Radiation damage and amorphization of si
โœ J.K.N. Lindner; R. Zuschlag; E.H. te Kaat ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 359 KB

Radiation damage and amorphization of (111) silicon after 2 MeV 14N ion implantation at temperatures from 125 to 450 K is studied in a dose range of 2 x 10 ~3 to 5 x 10 ~7 N cm -2 mainly by optical reflectivity depth profiling. Over a wide range of doses and temperatures, damage can be described by